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Study on the possibility of native oxide removal from GaP and GaAs surface by etching, using model experiments
Author(s) -
Somogyi M.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170910
Subject(s) - anhydrous , etching (microfabrication) , oxide , amorphous solid , solubility , crystallite , gallium , materials science , gallium oxide , isotropic etching , chemical engineering , chemistry , inorganic chemistry , nanotechnology , crystallography , metallurgy , organic chemistry , layer (electronics) , engineering
Crystallites of α‐Ga 2 O 3 , β‐Ga 2 O 3 , GaOOH, GaPO 4 and an amorphous phase have been detected previously on chemically etched GaP‐ and GaAs surfaces. The same compounds were prepared separately and submitted to solubility study, applying several etchants used in etching practice. It could be observed that the solubility of gallium oxides decreases as the chemically bound water is diminished, the anhydrous β‐Ga 2 O 3 being almost insoluble. As the same poorly soluble oxide forms were found on etched GaP and GaAs surfaces, the difficulties occurring in etching practice can be connected with their presence.