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Temperature profile and homogeneity of the growth rate of CVD Silicon from SiH 4 ‐HCl‐H 2 mixtures
Author(s) -
Kühne H.,
Morgenstern Th,
Kühne Ch.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170907
Subject(s) - susceptor , homogeneity (statistics) , wafer , silicon , graphite , epitaxy , chemical vapor deposition , chemistry , analytical chemistry (journal) , materials science , mineralogy , metallurgy , nanotechnology , organic chemistry , mathematics , statistics , layer (electronics)
With the aid of the methods of the statistical design of experiments for each wafer site ( x ) on the graphite susceptor an empiric polynomial was obtained for CVD epitaxial silicon from SiH 4 –HCl–H 2 mixtures, linking the growth rate v epi to the process parameters p 0 SiH 4, p 0 HCl , and T ( x ). By means of the statistical model optimum temperatur characteristics along the susceptor were selected and discussed for specific deposition conditions.