Premium
Autodoping during the deposition of epitaxial Silicon layers from the gas phase (I). Autodoping from the gas phase
Author(s) -
Kühne H.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170906
Subject(s) - dopant , gas phase , substrate (aquarium) , deposition (geology) , epitaxy , materials science , phase (matter) , layer (electronics) , doping , chemistry , nanotechnology , optoelectronics , paleontology , oceanography , organic chemistry , sediment , biology , geology
Abstract The doping profile within the autodoping range of epitaxial layers deposited on lowresistance substrates, is considered the result of redistributing a substrate doping fraction through the substrate layer boundary, of incorporating a limited amount of dopants from the gas phase, originating from the preepitaxial process, and the result of incorporating dopants, externally admitted to the gas flow during the deposition. Assuming a special incorporation equilibrium to exist for the gas phase fraction of autodoping an analytic expression is derived, correlating the autodoping profile characteristic to the limited amount of dopants in the gas phase. The extent is discussed, to which the gas phase fraction of autodoping may be influenced by varying the deposition process.