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Time‐varying Temperature Profile CVD Methods for Growing CuInS 2 and CdIn 2 S 4 Crystals
Author(s) -
Paorici C.,
Zanotti L.,
Curti M.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170803
Subject(s) - nucleation , phase (matter) , materials science , amplitude , chemical vapor deposition , chemistry , analytical chemistry (journal) , thermodynamics , nanotechnology , optics , physics , organic chemistry , chromatography
A time‐varying temperature profile method is reported for growing crystals in horizontal closed‐tube arrangements by vapour phase iodine transport. After an initial stage, during which the temperature is linearly raised with time in the source region of the container, in such a way as to control the primary nucleation (a limited number of seed crystals can thus be produced), a second stage follows during which the source temperature is allowed to oscillate in order to favour the secondary nucleation (only the first grown seed crystals are then allowed to grow). A proper choice of the frequency and amplitude of the temperature cycle is shown to control the growth up to the obtainement of solitary crystals per run of CuInS 2 and CdIn 2 S 4 . The role of the slow growing faces in favouring good performances of the method is emphasized.