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Etching of Anthracene Cleavages in Sulphuric Acid — Formic Acid Solutions
Author(s) -
Vaishnav R. M.,
Mehta B. J.,
Shah B. S.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170722
Subject(s) - etching (microfabrication) , formic acid , anthracene , cleavage (geology) , sulfuric acid , chemistry , crystal (programming language) , materials science , inorganic chemistry , chemical engineering , photochemistry , organic chemistry , composite material , computer science , layer (electronics) , fracture (geology) , engineering , programming language
Crystal etching, though a simple and widely adopted technique for the study of imperfections in a wide variety of materials, the process is not very well understood. The etch pit shapes are controlled by a number of factors, such as, the composition of etchant, the period of etching, the temperature of etching and the symmetry of plane under study. This communication reports observations of etching the (001) cleavage planes of anthracene in sulphuric acid — formic acid mixtures.