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Growth and Characterization of GaP Substrates for Liquid Phase Epitaxy
Author(s) -
Moravec F.,
Novotný J.,
Kirsten P.,
Siegel W.,
Koi H.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170707
Subject(s) - light emitting diode , epitaxy , luminescence , materials science , characterization (materials science) , diode , optoelectronics , liquid phase , phase (matter) , chemistry , nanotechnology , organic chemistry , physics , layer (electronics) , thermodynamics
GaP light‐emitting diodes were prepared by a single LPE process on LEC and SSD substrates. Red LEDs with a maximal efficiency of 5% could be grown reproducibly on SSD substrates with grains. The effciency of the best LEDs on substrates grown by the conventional LEC method is essentially lower (0.5%) but it can be improved considerably by a modification of the growth conditions. The substrates were characterized by structural, chemical, electrical and optical measurements and the observed differences in the luminescence efficiency between the LEDs grown on LEC and SSD subtrates, respectively, were discussed under consideration of these investigations.