Premium
The IR Television Scanning Technique as Temperature Field Control for Growing Silicon Crystals
Author(s) -
Geil W.,
Malitzki H.,
Tänzer D.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170606
Subject(s) - crystal (programming language) , silicon , field (mathematics) , crystal growth , materials science , signal (programming language) , representation (politics) , surface (topology) , optoelectronics , optics , computer science , crystallography , chemistry , physics , mathematics , geometry , politics , political science , pure mathematics , law , programming language
Outgoing from the idea that the temperature field of the growing crystal is the most general as well as characteristic representation of all technological parameters and equipment conditions the ir‐television scanning technique was as a method for recording and controlling of temperature distributions at the surface of growing crystals and melts. Using a number of electronic treshold value switches, some video signal amplitude levels can be made visible at the monitor, giving an overlook on the isotherm distribution at the crystal surface. Records of such observations are helpful for reproduction and optimization of crystal growth technologies. For Silicon crystal growth, the process control by ir‐television scanning technique is a fast, convenient, and nondisturbing one giving important informations.