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On the Structural and Electronic Characteristics of Titanium Sulphide (Tis 1.7 ) Crystals
Author(s) -
Pande Chitra,
Prasad Neelam,
Srivastava O.N.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170507
Subject(s) - semiconductor , materials science , electrical resistivity and conductivity , conductivity , conduction band , thermal conduction , crystal (programming language) , electron , condensed matter physics , crystallography , chemistry , optoelectronics , composite material , electrical engineering , physics , quantum mechanics , computer science , engineering , programming language
TiS 1.7 crystals have been grown by vapour transport technique employing a two‐zone furnace with the temperatures of reaction and growth zone maintained at 1073 K and 973 K, respectively. We have measured the variation of electrical conductivity (s̀) with temperature ( T ) of TiS 1.7 single crystals. It has been found that the conductivity increases at temperatures T > 433 K, which provides convincing evidence that the TiS 1.7 crystal is a semiconductor. Another electronic characteristic of TiS 1.7 crystals observed in the present investigation is the occurrence of voltage controlled negative resistance (VCNR) at a field of 32.1 V cm ‐1 to 35.7 V cm ‐1 . All the polytypes of TiS 1.7 were found to exhibit VCNR nearly at the same field which indicates that the VCNR is polytype independent property. The occurrence of VCNR has been explained on the intervally transfer of electrons in the conduction band.