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Redistribution of Heavy Metal Impurities in Silicon by Phosphorus Diffusion
Author(s) -
Knoll D.,
Fischer A.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170417
Subject(s) - redistribution (election) , silicon , impurity , metal , getter , phosphorus , diffusion , materials science , chemistry , intensity (physics) , chemical physics , analytical chemistry (journal) , inorganic chemistry , metallurgy , thermodynamics , environmental chemistry , optics , physics , organic chemistry , politics , political science , law
Based on a model for redistributing heavy metals in two‐phase‐silicon an expression is obtained, describing the intensity of redistribution, being determined by the segregation coefficient between intrinsic and phosphorus‐doped silicon and the spatial extension of the phosphorus phase. The P‐diffusion and heavy metal segregation representing two partial processes of heavy metal gettering are discussed as a one‐ and multiple‐temperature‐time‐procedure. The heavy metal gold is selected as an example, by means of which the different temperature‐time‐regimes are compared to each hother with a view to the redistribution intensity.