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Optical Properties of CuInSe 2 Thin Films Prepared by R.F. Sputtering
Author(s) -
Neumann H.,
Perlt B.,
AbdulHussein N.A.K.,
Tomlinson R.D.,
Hill A.E.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170412
Subject(s) - photon energy , band gap , sputtering , valence (chemistry) , valence band , atomic physics , thin film , attenuation coefficient , conduction band , semimetal , absorption (acoustics) , chemistry , copper , photon , quasi fermi level , condensed matter physics , materials science , analytical chemistry (journal) , optics , physics , electron , nanotechnology , organic chemistry , quantum mechanics , chromatography
The optical absorption of r.f. sputtered CuInSe 2 thin films was studied in the photon energy range from 1 to 3 eV. The gap energy and the spin‐orbit splitting are found to be (1.01 ± 0.01) eV and (0.24 ± 0.02) eV, respectively. From the photon energy dependence of the absorption coefficient it is concluded that the heavy and light hole bands are parabolic whilst the split‐off band contains terms linear in the wavevector. The optical transition probability for valence band‐ to‐ conduction band transitions is estimated to be (10.8 ± 1.0) eV which yields an admixture of copper d states to the valence band of (30 ± 8) %.