A p‐Al  x  Ga1‐  x  As‐p‐GaAs‐n‐GaAs concentrator solar cell design without a collection grid | Zendy

Romero R. | Zendy

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A p‐Al x Ga1‐ x As‐p‐GaAs‐n‐GaAs concentrator solar cell design without a collection grid

Author(s) -

Romero R.

Publication year - 1982

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.2170170325

Subject(s) - solar cell , substrate (aquarium) , concentrator , optoelectronics , gallium arsenide , materials science , epitaxy , optics , layer (electronics) , nanotechnology , physics , oceanography , geology

A concentrator solar cell is designed without a front contact collact collection grid. Its p‐Al x Ga 1– x As‐p‐GaAs‐n‐GaAs epitaxial structure on a p‐GaAs substrate allows for collection of the carriers generated in the p region through the substrate while carriers generated in the n region are collected through an edge ring contact. Although cell efficiency depends on specific cell design, it has been found that such a device may work efficiently at over 100 sun incident radiation levels.

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