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A p‐Al x Ga1‐ x As‐p‐GaAs‐n‐GaAs concentrator solar cell design without a collection grid
Author(s) -
Romero R.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170325
Subject(s) - solar cell , substrate (aquarium) , concentrator , optoelectronics , gallium arsenide , materials science , epitaxy , optics , layer (electronics) , nanotechnology , physics , oceanography , geology
A concentrator solar cell is designed without a front contact collact collection grid. Its p‐Al x Ga 1– x As‐p‐GaAs‐n‐GaAs epitaxial structure on a p‐GaAs substrate allows for collection of the carriers generated in the p region through the substrate while carriers generated in the n region are collected through an edge ring contact. Although cell efficiency depends on specific cell design, it has been found that such a device may work efficiently at over 100 sun incident radiation levels.