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Chemical etching of sapphire
Author(s) -
Marasina L. A.,
Malinovsky V. V.,
Pichugin I. G.,
Prentky P.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170320
Subject(s) - sapphire , etching (microfabrication) , materials science , isotropic etching , reactive ion etching , dry etching , engraving , optoelectronics , analytical chemistry (journal) , chemistry , nanotechnology , composite material , optics , chromatography , layer (electronics) , physics , laser
The results on etching of sapphire substrates with different orientation are discussed. High temperature etching in hydrogen stream and etching in the mixture of H 3 PO 4 and H 2 SO 4 were used in experiments. The relation of etching rates for different sapphire orientations were established in both cases. The conditions of nonselective etching were determined.