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The heteroepitaxial growth of vacuum‐deposited GaP thin films on Si substrates
Author(s) -
Malina V.,
Kohout J.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170312
Subject(s) - monocrystalline silicon , materials science , thin film , substrate (aquarium) , band gap , vacuum evaporation , epitaxy , vacuum deposition , evaporation , deposition (geology) , optoelectronics , silicon , nanotechnology , layer (electronics) , paleontology , oceanography , physics , sediment , geology , biology , thermodynamics
Heteroepitaxial GaP thin films were grown on (100) and (111)Si substrates by vacuum evaporation of the compound GaP and their structural characteristics were compared with homoepitaxial GaP films grown by the same technique on (100)GaP substrates. Nearly monocrystalline GaP thin films were deposited reproducibly on (100)Si substrates at the optimum substrate temperature of about 680–700°C and the deposition rate of 0.1 nms −1 . The structure of such films was comparable in quality to homoepitaxial GaP/GaP films. No monocrystalline films could be deposited on (111)Si substrates.