Premium
The incorporation of oxygen impurities in semiconductor silicon in chemical vapour deposition
Author(s) -
Bartsch K.,
Wolf E.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170309
Subject(s) - oxygen , silicon , chemical vapor deposition , impurity , hydrogen , semiconductor , deposition (geology) , atmospheric temperature range , chemistry , analytical chemistry (journal) , inorganic chemistry , materials science , environmental chemistry , thermodynamics , organic chemistry , optoelectronics , paleontology , physics , sediment , biology
The incorporation of oxygen traces in chemical vapour deposited semiconductor silicon has been calculated for the temperature range of 1200–1500 K in dependence on the excess of hydrogen in the reaction gas. The results obtained correspond to the experimental data. With increasing temperatures of deposition and increasing excess of hydrogen the incorporation of oxygen decreases at a constant concentration of oxygen in the initial state.