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The effect of mechanical instability on crystallization rate in czochralski growth system
Author(s) -
Manucharyan S. M.,
Nalbandyan H. G.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170305
Subject(s) - crystallization , growth rate , crucible (geodemography) , materials science , instability , crystal growth , crystal (programming language) , crystallography , displacement (psychology) , thermodynamics , mineralogy , chemistry , mechanics , physics , geometry , mathematics , computer science , computational chemistry , programming language , psychology , psychotherapist
The effect of mutual displacement of crucible and crystal or melt level change on crystallization rate is described in one‐dimensional heat‐transfer approximation. It is found that Czochralski growth system is very sensitive to mechanical instability and crystallization rate follows the jitter pattern. As an example crystallization rate behaviour is examined for fluorite and silicon crystal growth.