Premium
The pAl 0.7 Ga 0.3 As‐pGaAs‐nGaAs concentrator cell with electrolytical contacts
Author(s) -
Prutskij T. A.,
Purón E.,
Rodríguez J. A.,
Romero R.,
DeRoux S.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170221
Subject(s) - concentrator , annealing (glass) , open circuit voltage , materials science , solar cell , radiation , optoelectronics , voltage , optics , electrical engineering , physics , composite material , engineering
The technological procedure involved in making p‐Al 0.7 Ga 0.3 As‐p‐GaAs‐n‐GaAs concentrator solar cells by forced cooling LPE is discussed. Electrical contacts were electrochemically deposited from acid baths of Au and Ni, followed by annealing. 1.4 A/cm 2 short current densities and 1 V open circuit voltages were measured under 7 W/cm 2 incident radiation.