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Determination of the fermi level, fermi distribution and activity coefficient for p‐SiC(Al)
Author(s) -
Lilov S. K.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170219
Subject(s) - aluminium , silicon carbide , fermi level , impurity , materials science , fermi gamma ray space telescope , carbide , condensed matter physics , doping , analytical chemistry (journal) , chemistry , metallurgy , physics , electron , nuclear physics , organic chemistry , chromatography
A calculation was made of the Fermi level value and Fermi distribution at different temperatures, concentrations of impurities and degrees of compensation in acceptive silicon carbide, doped by aluminium. The dependence of the activity coefficient of aluminium in the silicon carbide on the concentration and the temperature was established.