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Investigation of GaN heteroepitaxial layers by means of the kossel effect technique
Author(s) -
Geist V.,
Ehrlich C. H.,
Flagmeyer R.,
Ullrich H. J.,
Greiner W.,
Rolle S.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170218
Subject(s) - spinel , sapphire , materials science , irradiation , lattice (music) , excitation , proton , lattice constant , electron , crystal (programming language) , condensed matter physics , crystallography , diffraction , chemistry , optics , physics , nuclear physics , laser , quantum mechanics , computer science , acoustics , metallurgy , programming language
GaN heteroepitaxial layers grown on spinel substrates have been investigated by the Kossel effect technique. The excitation of GaK α X‐rays inside the crystal lattice was carried out either by means of 1.25 MeV protons or 40 KeV electrons. Both methods give similar results concerning the values of the lattice parameters and the sign of polarity. Following the proton irradiation a lattice expansion normal to the surface occurs. A comparison of our results with those of other authors shows that the growth direction is the same for {111} spinel and {0001} sapphire substrates.