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Influence of non‐uniformity of laser beam intensity on the surface layer structure of implanted silicon crystals
Author(s) -
Wielunski M.,
Auleytner J.,
Czarnecki S.,
Turos A.,
Wielunska D.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170211
Subject(s) - silicon , materials science , intensity (physics) , layer (electronics) , laser , beam (structure) , laser beams , surface layer , optics , optoelectronics , composite material , physics
The influence of the non‐uniformity of intensity distribution in a laser beam on the surface layer structure of As‐implanted silicon crystals as well as a method for homogenizing a pulsed laser beam is described.
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