Premium
Temperature and Intensity Behaviour of the pAl 0.7 Ga 0.3 As‐pGaAs‐nGaAs Concentrator Solar Cell
Author(s) -
Díaz P.,
Hernandez L.,
Romero R.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170109
Subject(s) - concentrator , solar cell , solar cell efficiency , open circuit voltage , energy conversion efficiency , range (aeronautics) , materials science , intensity (physics) , short circuit , radiation , voltage , optics , optoelectronics , nuclear engineering , physics , electrical engineering , composite material , engineering
A semiempirical approch for calculation of pAl 0.7 Ga 0.3 As‐pGaAs‐nGaAs concentrator solar cell behaviour in a very wide range of operating temperatures (77 K – 490 K) is developed. Experimental values of cell collection efficiency, short circuit current and open circuit voltage are given, while cell fill factor and overall conversion efficiency are calculated. Optimum cell operating conditions are found both for AM 1 and AM 0 radiation.