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Influence of Microdefects on the Generation of Dislocations in Homoepitaxial Gallium Phosphide Layers Grown on LEC Substrates
Author(s) -
Wagner G.,
Gottschalch V.,
Pasmann M.
Publication year - 1982
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.2170170108
Subject(s) - transmission electron microscopy , dislocation , epitaxy , cleavage (geology) , materials science , gallium phosphide , crystallography , layer (electronics) , substrate (aquarium) , electron microscope , condensed matter physics , optoelectronics , optics , chemistry , nanotechnology , composite material , physics , geology , oceanography , fracture (geology)
GaP LEC substrates doped with sulphur ( N D – N A roughly (3–7) × 10 17 cm −3 ) were characterized by transmission electron microscopy. This material was found to contain microdefects such as perfect perismatic dislocation loops, and spherical precipitates. Cross‐sectional TEM investigations perfomed have shown that above all perfect dislocation loops lying directly at the substrate/layer interface are sources for the formation of extended dislocations propagating through the epitaxial layer. Using the methods of selective photoetching and AB‐etching on (110) cleavage faces this phenomenon was observed, too.