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Correlation between Light Microscopical and Electron Microscopical Images of Crystal Defects in GaP
Author(s) -
Tempel A.,
Löschke K.,
Bartsch H.
Publication year - 1981
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.2170160714
Subject(s) - dislocation , scattering , impurity , materials science , crystal (programming language) , photon , electron , light scattering , condensed matter physics , optics , molecular physics , line (geometry) , physics , geometry , nuclear physics , mathematics , quantum mechanics , computer science , programming language
Ultramicroscopy and dark‐field‐illumination basing on the scattering of photons are easily available, they are nondestructive light microscopical methods for real structure investigations of semiconducting materials. The observation of dislocations is possible because of photon scattering at precipitations adherent to the dislocation line. This work gives a direct correlation between light microscopical and electron microscopical images of dislocations and in this way some hints on the nature of scattering centres. The light scattering takes place at precipitations caused due to gettering of impurity atoms by the dislocation line. Besides elongated dislocations prismatic loops were observed. The loop density was found to be in the order of magnitude of about 10 12 cm −3 which corresponds to a concentration of about 10 17 atoms contained in the loops in good agreement with the concentration of impurities in the crystals.