Gallium(III) Oxide: Formation of High‐Quality Heteroepitaxial β‐Ga 2 O 3  Films by Crystal Phase Transition (Crystal Research and Technology 2/2021) | Zendy

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Gallium(III) Oxide: Formation of High‐Quality Heteroepitaxial β‐Ga 2 O 3 Films by Crystal Phase Transition (Crystal Research and Technology 2/2021)

Publication year - 2021

Publication title -

crystal research and technology

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0232-1300

DOI - 10.1002/crat.202170012

Subject(s) - crystal (programming language) , substrate (aquarium) , epitaxy , hexagonal crystal system , gallium , materials science , crystallography , oxide , phase transition , phase (matter) , sapphire , nanotechnology , condensed matter physics , chemistry , physics , optics , metallurgy , computer science , geology , layer (electronics) , laser , oceanography , organic chemistry , programming language

This picture, provided by Min Yang and co‐workers (article number 2000149), shows hexagonal shaped ɛ‐Ga 2 O 3 islands growing as a film on a c ‐sapphire substrate. ɛ‐Ga 2 O 3 grows well into high‐quality films with low surface roughness and low defect density for hexagonal oriented substrates. When the grown ɛ‐Ga 2 O 3 film is heat treated under certain conditions, it is completely converted into β‐Ga 2 O 3 without changing its morphological properties.

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