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Dislocation Etching Morphology on the A Plane of Sapphire Crystal
Author(s) -
Cao Fuyang,
Li Fei,
Yuan Zhiyong,
Zhang Lunyong,
Jiang Sida,
Shen Hongxian,
Ning Zhiliang,
Huang Yongjiang,
Xing Dawei,
Zuo Hongbo,
Han Jiecai,
Sun Jianfei
Publication year - 2021
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.202100022
Subject(s) - etching (microfabrication) , potassium hydroxide , sapphire , dislocation , morphology (biology) , crystal (programming language) , activation energy , plane (geometry) , crystallography , materials science , potassium niobate , isotropic etching , atom (system on chip) , chemistry , composite material , geometry , optics , optoelectronics , physics , geology , dielectric , mathematics , laser , computer science , embedded system , paleontology , layer (electronics) , programming language , organic chemistry , ferroelectricity
In this work, the dislocation etching pit morphology and etching kinetics on the A ‐{11 2 ¯ 0} plane of sapphire crystal (α‐Al 2 O 3 ) are studied experimentally. The results show that the etch pit exhibits a subrhombic 3D morphology, which is consistent with the atom arrangement symmetry of the A plane. Further analysis shows that the two adjacent sides of the rhombic etch pits correspond to the directions [3 3 ¯ 0 1 ¯ ] and [3 3 ¯ 02], respectively; both of them are in the atomic close‐packing direction of A plane. The etch pits are controlled by a chemical reaction between Al 2 O 3 and potassium hydroxide (KOH) with the reaction activation energy of 51.7 kJ mol −1 , which is developed in a manner of kinematic wave by the step moving with a constant speed.
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