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Silicon Crystal Growth: Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible (Crystal Research and Technology 8/2020)
Publication year - 2020
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.202070025
Subject(s) - crucible (geodemography) , silicon , crystal (programming language) , crystal growth , consistency (knowledge bases) , materials science , computer science , mechanical engineering , physics , chemistry , thermodynamics , engineering , optoelectronics , artificial intelligence , computational chemistry , programming language
In article number 2000044, M. Nicolai L. Lorenz‐Meyer and co‐workers propose a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the physical conditions of the process. Experiments are conducted to identify the model parameters and the physical consistency is verified using simulation studies.