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Formation of High‐Quality Heteroepitaxial β‐Ga 2 O 3 Films by Crystal Phase Transition
Author(s) -
Lee Hansol,
Kim Soyoon,
Ahn Hyungsoo,
Kim Kyounghwa,
Yang Min
Publication year - 2021
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.202000149
Subject(s) - materials science , annealing (glass) , electrical resistivity and conductivity , sapphire , thin film , epitaxy , analytical chemistry (journal) , doping , phase transition , crystallography , nanotechnology , optoelectronics , condensed matter physics , optics , chemistry , metallurgy , physics , laser , layer (electronics) , chromatography , electrical engineering , engineering
Sn‐doped ɛ‐phase dominant Ga 2 O 3 films (ɛ‐Ga 2 O 3 films) are grown on c ‐plane sapphire substrates using metal–organic vapor‐phase epitaxy and transformed to β‐phase films by thermal annealing. The morphological and electrical properties of the phase‐transformed β‐Ga 2 O 3 films dependent on experimental conditions are characterized. The ɛ‐Ga 2 O 3 film is completely transformed to the β‐phase by thermal annealing to realize a high electrical conductivity while maintaining a good surface flatness. When the ɛ‐Ga 2 O 3 films are grown, a mixing ratio of the β‐Ga 2 O 3 component to the ɛ‐Ga 2 O 3 film is controlled to improve the crystalline quality of the β‐Ga 2 O 3 films transformed from ɛ‐Ga 2 O 3 by annealing (transformed β‐Ga 2 O 3 ). Compared to an as‐grown β‐Ga 2 O 3 film, higher‐quality heteroepitaxial β‐Ga 2 O 3 films with better electrical conductivity and surface morphology can be obtained by the phase transition method, and these results show adequate repeatability.