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Photoluminescence Mechanism in Heavily Si‐Doped GaAsN
Author(s) -
Tsukasaki Takashi,
Hiyoshi Ren,
Fujita Miki,
Makimoto Toshiki
Publication year - 2021
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.202000143
Subject(s) - photoluminescence , doping , band gap , effective mass (spring–mass system) , materials science , condensed matter physics , valence (chemistry) , analytical chemistry (journal) , optoelectronics , chemistry , physics , chromatography , quantum mechanics , organic chemistry
The photoluminescence (PL) mechanism is discussed for heavily Si‐doped GaAsN, and the evaluation method of electron effective mass ( m e * ) is proposed using its PL peak energy. PL peak energy monotonically decreases as increasing temperature, so the S‐shape characteristic is vanished for this heavily Si‐doped GaAsN as opposed to moderately Si‐doped GaAsN. This result shows that the dominant PL process is an optical transition from the Fermi energy to the top of valence band independent of temperature for this heavily Si‐doped GaAsN, as with degenerate n‐type GaAs. Because PL peak energy is expressed by the sum of bandgap energy, the increased energy of the Burstein–Moss effect, and the decreased energy of the bandgap narrowing, m e * is calculated to be 0.098 m 0 for this heavily Si‐doped GaAsN with nitrogen composition of 0.6%, where m 0 is the electron mass. This result agrees well with previous studies, meaning that the method for estimation of m e is effective for dilute GaAsN.