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The Effect of the Structural‐Phase State and Diffusion Processes on Electrical Conductivity of Nanocrystalline Fe x Co 100− x /Cu/ Fe x Co 100− x Thin Films (0 < x < 100)
Author(s) -
Saltykov Dmytro,
Shumakova Natalia,
Pazukha Iryna,
Shkurdoda Yurii,
Protsenko Serhii
Publication year - 2020
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.202000071
Subject(s) - nanocrystalline material , materials science , electrical resistivity and conductivity , annealing (glass) , analytical chemistry (journal) , lattice constant , crystallography , thin film , ferromagnetism , condensed matter physics , metallurgy , chemistry , nanotechnology , diffraction , optics , physics , chromatography , electrical engineering , engineering
Abstract The complex investigation of the crystal, diffusion processes, and electrical conductivity of Fe x Co 100− x (0 < x < 100) film alloys and Fe x Co 100− x /Cu/Fe x Co 100− x /Sub three‐layer films with a ferromagnetic layer thickness d F = 20–50 nm and a nonmagnetic layer thickness d N = 2–30 nm has been carried out. For both as‐deposited and annealed at 700 K films at x = 50, 80 at%, the phase composition corresponds to bcc‐Fe x Co 100− x (single‐layer films) or bcc‐Fe x Co 100− x + fcc‐solid solution of Fe and Co atoms that isomorphically replace each other in the Cu lattice (three‐layer film). At x = 20 at%, the phase composition of as‐deposited single‐layer films corresponds to bcc‐Fe x Co 100− x + hcp‐Co and bcc‐Fe x Co 100− x + fcc‐Cu + hcp‐Co in the case of three‐layer films. After heat treatment at 700 K, the phase composition corresponds to bcc‐Fe x Co 100− x + fcc‐Co (single‐layer films) and bcc‐Fe x Co 100− x + fcc‐s.s. Cu (Fe, Co) (three‐layer film). For three‐layer samples with d F = 30–50 nm, d N = 10–30 nm, annealing at 700 K does not lead to complete mixing of the layers, their original order is preserved. In the temperature dependence of the resistivity, three characteristic regions, where the various electron scattering mechanisms dominate, are distinguished and grounded.