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Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible
Author(s) -
LorenzMeyer M. Nicolai L.,
Menzel Robert,
Dadzis Kaspars,
Nikiforova Angelina,
Riemann Helge
Publication year - 2020
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.202000044
Subject(s) - crucible (geodemography) , consistency (knowledge bases) , silicon , process (computing) , model parameter , thermal , materials science , basis (linear algebra) , crystal (programming language) , mechanics , control theory (sociology) , computer science , thermodynamics , mathematics , physics , metallurgy , chemistry , control (management) , algorithm , geometry , computational chemistry , programming language , artificial intelligence , operating system
In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model‐based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached.