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Growth and Properties of Intentionally Carbon‐Doped GaN Layers
Author(s) -
Richter Eberhard,
Beyer Franziska C.,
Zimmermann Friederike,
Gärtner Günter,
Irmscher Klaus,
Gamov Ivan,
Heitmann Johannes,
Weyers Markus,
Tränkle Günther
Publication year - 2020
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201900129
Subject(s) - passivation , acceptor , electrical resistivity and conductivity , materials science , carbon fibers , doping , activation energy , hydrogen , hydride , analytical chemistry (journal) , epitaxy , atmospheric temperature range , conductivity , metal , optoelectronics , chemistry , nanotechnology , layer (electronics) , condensed matter physics , metallurgy , composite material , organic chemistry , electrical engineering , physics , engineering , composite number , chromatography , meteorology
Carbon‐doping of GaN layers with thickness in the mm‐range is performed by hydride vapor phase epitaxy. Characterization by optical and electrical measurements reveals semi‐insulating behavior with a maximum of specific resistivity of 2 × 10 10 Ω cm at room temperature found for a carbon concentration of 8.8 × 10 18 cm −3 . For higher carbon levels up to 3.5 × 10 19 cm −3 , a slight increase of the conductivity is observed and related to self‐compensation and passivation of the acceptor. The acceptor can be identified as C N with an electrical activation energy of 0.94 eV and partial passivation by interstitial hydrogen. In addition, two differently oriented tri‐carbon defects, C N ‐a‐C Ga ‐a‐C N and C N ‐a‐C Ga ‐c‐C N , are identified which probably compensate about two‐thirds of the carbon which is incorporated in excess of 2 × 10 18 cm −3 .
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