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Semiconductor Crystal Growth under the Influence of Magnetic Fields
Author(s) -
FrankRotsch Christiane,
Dropka Natasha,
Kießling FrankMichael,
Rudolph Peter
Publication year - 2020
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201900115
Subject(s) - dopant , crystal (programming language) , crystal growth , turbulence , magnetic field , melt flow index , materials science , flow (mathematics) , semiconductor , convection , condensed matter physics , mechanics , doping , optoelectronics , chemistry , physics , crystallography , composite material , computer science , quantum mechanics , copolymer , programming language , polymer
The recent development of semiconductor crystal growth focusses on increase of process efficiency and simultaneous improvement of crystal quality. For improved crystal quality, an exact and permanent control of the melt flow is a crucial parameter. To achieve larger crystals, the melt volume must be increased markedly resulting in disadvantageously changed melt convection. In the case of Czochralski growth, the flow can even become turbulent. This changed flow can disturb the single crystal growth and may give rise to dopant inhomogeneities within the crystal. To effectively influence melt flow and hence to improve growth conditions, magnetic fields can be applied. Mostly, steady magnetic fields (SMF) are applied in industrial scale to damp melt flow oscillations. However, compared to SMF the application of non‐SMF proves to be also very promising since significantly lower induction causes similar effects in the melt. An overview on magnetic field features with the focus on achievable results under the influence of traveling magnetic fields is given.