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Cover Picture: Crystal Research and Technology 5'2018
Publication year - 2018
Publication title -
crystal research and technology
Language(s) - English
Resource type - Reports
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201870008
Subject(s) - ingot , wafer , cover (algebra) , silicon , crystalline silicon , crystal (programming language) , materials science , quality (philosophy) , nanotechnology , engineering physics , computer science , mechanical engineering , optoelectronics , engineering , physics , metallurgy , alloy , quantum mechanics , programming language
Solar Cells The control and reduction of defects in multi‐crystalline silicon (mc‐Si) for photovoltaic industry have been an ongoing topic. On the cover a machined so‐called high‐performance mc‐Si ingot is imaged. The ingot was obtained by directional solidification (DS) in a G1‐sized furnace. The material quantity of about 16 kg and ingot dimensions of 220 × 220 × 145 mm 3 is typically for material quality investigation. It can be seen that the unfavourable rims of the as‐grown ingot were already cut to 156 × 156 mm 2 the standard industrial geometry of solar cells, while the as‐grown bottom and top are still unmachined. The dark spots in the bottom area are holes indicating the use of a seeding layer. In next steps this brick was cut in wafers and solar cells have been fabricated. Different approaches to influence the grain structure of silicon ingots by DS have been investigated by Frank M. Kießling and co‐workers in article number 1700272 .