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Pore Wall Thinning of Mesoporous 4H‐SiC by Sacrificial Oxidation
Author(s) -
Rashid Marzaini,
Idris Muhammad Idzdihar,
Horrocks Benjamin Richard,
Healy Noel,
Goss Jonathan Paul,
Horsfall Alton Barrett
Publication year - 2018
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201800120
Subject(s) - mesoporous material , materials science , hydrofluoric acid , thinning , porosity , nanostructure , nanoscopic scale , nanometre , chemical engineering , composite material , nanotechnology , metallurgy , chemistry , catalysis , organic chemistry , ecology , engineering , biology
Pore wall thinning of mesoporous 4H‐SiC by sacrificial oxidation is performed. The dimensions within the as‐etched porous SiC are reduced during dry oxidation at 1100 °C by consuming SiC and removing the grown SiO 2 in the subsequent hydrofluoric acid (HF) dip step. The process reduces the average pore wall thickness from 27 nm to approximately 16 nm and reduces the thickness standard deviation from ±5 to ±1.4 nm for the investigated 9 h oxidation interval. The new pore wall thinning method will enable controlled nanoscale size reduction capability for mesoporous 4H‐SiC derived nanostructures.