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Structural and Electrical Characteristics of an Aurivillius Family Compound Bi 2 LaTiVO 9
Author(s) -
Gupta Prabhasini,
Mahapatra Prasanta Kumar,
Choudhary Ram Naresh Prasad
Publication year - 2018
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201800045
Subject(s) - aurivillius , materials science , bismuth , ferroelectricity , activation energy , orthorhombic crystal system , vacancy defect , crystallography , bismuth vanadate , electrical resistivity and conductivity , condensed matter physics , crystal structure , chemistry , dielectric , optoelectronics , physics , biochemistry , photocatalysis , electrical engineering , metallurgy , engineering , catalysis
The synthesis and characterization of bismuth lanthanum titanium vanadate (i.e., Bi 2 LaTiVO 9 ), a new member of bismuth layer structure ferroelectric, are reported in this paper. The compound crystallizes in a single phase orthorhombic system. The smallest pentavalent V 5+ ion in the compound results in higher polarization and low loss properties as compared to other similar compounds of Aurivillius family. The partial substitution of La 3+ ion at the Bi 3+ sites of Bi 2 O 2 layers results in relaxor ferroelectric behavior with an expected decrease in transition temperature. The activation energy for both relaxation and conduction processes is in the vicinity of the activation energy of oxygen vacancy suggesting oxygen–vacancy activated charge carriers in both conductivity and relaxation processes.