Premium
Experimental Observation and Mitigation of Dielectric Screening in Hexagonal Boron Nitride Based Resistive Switching Devices
Author(s) -
Wang Bingru,
Xiao Na,
Pan Chengbin,
Shi Yuanyuan,
Hui Fei,
Jing Xu,
Zhu Kaichen,
Guo Biyu,
Villena Marco A.,
Miranda Enrique,
Lanza Mario
Publication year - 2018
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201800006
Subject(s) - materials science , dielectric , fabrication , optoelectronics , resistive touchscreen , yield (engineering) , voltage , hexagonal crystal system , humidity , hexagonal boron nitride , insulator (electricity) , nanotechnology , composite material , electrical engineering , chemistry , medicine , alternative medicine , physics , graphene , pathology , thermodynamics , crystallography , engineering
Moisture and water penetration is one of the main phenomena altering the electrical characteristics and performance of resistive switching (RS) devices based on metal/insulator/metal nanojunctions. However, the effect of these phenomena in RS devices made of two dimensional (2D) materials has never been studied. In this paper it is shown that 2D materials based RS devices exposed to high relative humidity environments develop dielectric screening effects. The devices measured right after fabrication show a yield of 95% and bipolar RS characteristics, while after exposure to humid environments for two months the yield decreases to 65%. More than 30% of the devices show much lower currents than the fresh counterparts, and at high voltages they exhibit clear dielectric screening effects. This behavior is even more accentuated in RS devices that require the transfer of the 2D material, and we observe that a baking step at 120 °C for 5 min can mitigate this effect.