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Growth of Highly Crystalline and Large Scale Monolayer MoS 2 by CVD: The Role of substrate Position
Author(s) -
Kumar Nand,
Tomar Ruchi,
Wadehra Neha,
Devi M. Manolata,
Prakash Bhanu,
Chakraverty Suvankar
Publication year - 2018
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201800002
Subject(s) - raman spectroscopy , monolayer , crystallinity , chemical vapor deposition , substrate (aquarium) , molybdenum disulfide , materials science , layer (electronics) , kelvin probe force microscope , transmission electron microscopy , atomic force microscopy , microscopy , nanotechnology , analytical chemistry (journal) , optoelectronics , chemical engineering , chemistry , composite material , optics , oceanography , physics , engineering , chromatography , geology
Monolayer (ML) molybdenum disulphide (MoS 2 ) is of great interest for the scientific community due to its attractive electronic, optoelectronic and mechanical properties. Synthesis of high quality and large size ML MoS 2 at low cost is still a challenge. Here, the growth of large area (≈5 × 1 mm 2 ) ML MoS 2 on SiO 2 /Si substrate via chemical vapor deposition (CVD) method is reported. It is shown by changing the substrate position w.r.t. MoO 3 precursor, that the quality and size of the ML MoS 2 can be drastically tuned. Raman spectroscopy and transmission electron microscopy are performed in order to ascertain the growth and high crystallinity of MoS 2 . Uniformity of MoS 2 layer is adjudged by Raman mapping while atomic force microscopy is performed to determine the thickness of the layer. Kelvin probe force microscopy is performed on ML MoS 2 to draw the band line up of the material.