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Growth of Bulk GaN from Gas Phase
Author(s) -
Siche Dietmar,
Zwierz Radoslaw
Publication year - 2018
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201700224
Subject(s) - hydride , halide , limiting , yield (engineering) , vapor phase , epitaxy , chlorine , growth rate , materials science , chemical physics , phase (matter) , gas phase , hydrogen , chemistry , nanotechnology , chemical engineering , inorganic chemistry , thermodynamics , metallurgy , organic chemistry , physics , mechanical engineering , geometry , mathematics , layer (electronics) , engineering
The present status of the GaN bulk growth by vapor growth methods is reviewed and is shortly classified into all methods with bulk growth potential. The hydride vapor phase epitaxy (HVPE) as the most developed and already commercialized method using chlorine as transport agent was frequently reviewed before. However, it does not yield true bulk GaN, suffers from perfection limiting heteroepitaxy, direction depending growth rate, parasitic growth and by‐product formation, the latter both limiting the process duration. Therefore, in this review other methods are considered. Alternative transport agents are pronounced, like iodine, hydrogen, oxygen, water and the pseudo halide CN − ‐ ion, which are not able to reveal potential for bulk growth. These mostly less successful approaches, are sometimes repeated, because not adequately published.