Premium
Characterization of Rutile SnO 2 Epitaxial Films Grown on MgF 2 (001) Substrates by MOCVD
Author(s) -
He Linan,
Luan Caina,
Cao Qiong,
Feng Xianjin,
Zhao Wei,
Ma Jin
Publication year - 2018
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201700168
Subject(s) - rutile , epitaxy , metalorganic vapour phase epitaxy , crystallinity , materials science , chemical vapor deposition , electrical resistivity and conductivity , substrate (aquarium) , thin film , analytical chemistry (journal) , band gap , transmittance , mineralogy , chemical engineering , nanotechnology , optoelectronics , chemistry , composite material , layer (electronics) , organic chemistry , oceanography , electrical engineering , geology , engineering
Rutile SnO 2 epitaxial films are deposited on MgF 2 (001) substrates at different substrate temperatures (540–660 °C) by metal organic chemical vapor deposition. Structural, optical, and electrical properties of the films as well as the epitaxial mechanism are investigated in detail. The structure analyses manifest that the film deposited at 620 °C is rutile phase SnO 2 and exhibits the best crystallinity. The epitaxial relationships are determined as SnO 2 (110) || MgF 2 (001) with SnO 2 [001] || MgF 2 [110] and [ 1 ¯ 10]. The Hall mobility, resistivity, and carrier concentration of the 620 °C‐deposited film are 10.4 cm 2 · V −1 · s −1 , 0.75 Ω · cm, and 8.1 × 10 17 cm −3 respectively. The average transmittance in the visible range of the SnO 2 film deposited at 620 °C exceeds 88% and the optical band gap is about 3.93 eV.