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Numerical design of Metal‐Organic Vapour Phase Epitaxy process for gallium nitride epitaxial growth
Author(s) -
Skibinski J.,
Caban P.,
Wejrzanowski T.,
Oliver G.J.,
Kurzydlowski K.J.
Publication year - 2016
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201600265
Subject(s) - epitaxy , gallium nitride , materials science , gallium , nitride , metal , phase (matter) , process (computing) , metalorganic vapour phase epitaxy , optoelectronics , nanotechnology , chemistry , metallurgy , computer science , organic chemistry , layer (electronics) , operating system
The paper presents the results of numerical simulations and experimental measurements of the epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy within a AIX‐200/4RF‐S reactor. The aim was to develop optimal process conditions for obtaining the most homogeneous crystal layer. Since there are many factors influencing the chemical reactions on the crystal growth area such as: temperature, pressure, gas composition or reactor geometry, it is difficult to design an optimal process. In this study various process pressures and hydrogen volumetric flow rates have been considered. Due to the fact that it is not economically viable to test every combination of possible process conditions experimentally, detailed 3D modeling has been used to get an overview of the influence of process parameters. Numerical simulations increased the understanding of the epitaxial process by calculating the heat and mass transfer distribution during the growth of gallium nitride. Appropriate chemical reactions were included in the numerical model which allowed for the calculation of the growth rate of the substrate. The results obtained have been applied to optimize homogeneity of GaN film thickness and its growth rate.