Substitution effects on ferroelectric, leakage current and anti‐fatigue characteristic of Bi 4‐x Sb x Ti 3 O 12 thin films

Bi 4‐x Sb x Ti 3 O 12 (BSTO) (x = 0, 0.03, 0.04, 0.05, 0.06 and 0.07) thin films have been fabricated on Pt/Ti/SiO 2 /Si substrates by sol‐gel method. The effects of various Sb 3+ content on microstructure and ferroelectric properties of systems are investigated. XRD show that Bi 4‐x Sb x Ti 3 O 12 (x≠0) thin films prefer (117) orientation. The substitution Sb 3+ for Bi 3+ reduces the grain size of the film surface. Compared to the BTO (x = 0) film, Bi 4‐x Sb x Ti 3 O 12 films display exciting electric properties. Especially when x = 0.04, the film Bi 3.96 Sb 0.04 Ti 3 O 12 has achieved the max 2 P r value of 87μC/cm 2 . This film also has a better anti‐fatigue characteristic, which can be up to 10 10 switching cycles without fatigue. The leakage current density improved with J = 8×10 −8 A/cm 2 .