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Substitution effects on ferroelectric, leakage current and anti‐fatigue characteristic of Bi 4‐x Sb x Ti 3 O 12 thin films
Author(s) -
Wang Zan,
Jiang Wei,
Li Sanxi,
Song Dezhi
Publication year - 2016
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201600073
Subject(s) - ferroelectricity , materials science , substitution (logic) , thin film , bismuth , leakage (economics) , analytical chemistry (journal) , crystallography , mineralogy , chemistry , optoelectronics , metallurgy , dielectric , nanotechnology , economics , macroeconomics , chromatography , computer science , programming language
Bi 4‐x Sb x Ti 3 O 12 (BSTO) (x = 0, 0.03, 0.04, 0.05, 0.06 and 0.07) thin films have been fabricated on Pt/Ti/SiO 2 /Si substrates by sol‐gel method. The effects of various Sb 3+ content on microstructure and ferroelectric properties of systems are investigated. XRD show that Bi 4‐x Sb x Ti 3 O 12 (x≠0) thin films prefer (117) orientation. The substitution Sb 3+ for Bi 3+ reduces the grain size of the film surface. Compared to the BTO (x = 0) film, Bi 4‐x Sb x Ti 3 O 12 films display exciting electric properties. Especially when x = 0.04, the film Bi 3.96 Sb 0.04 Ti 3 O 12 has achieved the max 2 P r value of 87μC/cm 2 . This film also has a better anti‐fatigue characteristic, which can be up to 10 10 switching cycles without fatigue. The leakage current density improved with J = 8×10 −8 A/cm 2 .