Premium
Influence of oxidization temperature on Zn(O,S) films deposited by electron beam evaporation
Author(s) -
Chen Chao,
Cheng Shuying,
Zhang Hong,
Zhou Haifang,
Jia Hongjie
Publication year - 2016
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201600023
Subject(s) - oxidizing agent , thin film , electron beam physical vapor deposition , materials science , evaporation , electrical resistivity and conductivity , band gap , transmittance , analytical chemistry (journal) , layer (electronics) , zinc , chemistry , optoelectronics , metallurgy , nanotechnology , physics , organic chemistry , engineering , chromatography , electrical engineering , thermodynamics
Zn(O,S) films were fabricated by oxidizing ZnS thin films deposited by electron beam evaporation method onto glass substrates at temperatures of 350–500℃ for 2 h in an atmosphere of oxygen. The XRD and EDX confirmed that the Zn(O,S) films were obtained successfully. The influence of the oxidization temperature on the optical and electrical properties of the Zn(O,S) thin films was investigated. The experimental results show that the Zn(O,S) thin film oxidized at the temperature of 400℃ exhibits better properties than others, with the transmittance of 86% in the visible region, the band gap energy of 3.36 eV and the resistivity of 3.22 × 10 3 Ω·cm, which makes it a potential buffer layer of solar cell.