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Oxygen and hydrogen profiles and electrical properties of unintentionally doped gallium nitride grown by hydride vapor phase epitaxy
Author(s) -
Garbe Valentin,
Abendroth Barbara,
Stöcker Hartmut,
Gavrilov Arkadi,
CohenElias Doron,
Mehari Shlomo,
Ritter Dan,
Meyer Dirk C.
Publication year - 2015
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201570011
Subject(s) - dopant , doping , materials science , epitaxy , hydride , impurity , gallium , oxygen , vapor phase , hydrogen , gallium nitride , optoelectronics , analytical chemistry (journal) , nanotechnology , chemistry , metallurgy , metal , organic chemistry , layer (electronics) , chromatography , physics , thermodynamics
As a consequence of the growth process, undoped commercially available GaN epi layers possess unintentionally incorporated dopants. Electrical and optical methods reveal the doping level and mobility profile which correlates to oxygen impurity distribution and lattice strain