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Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X‐ray in situ visualization and advanced doping page 2–9 by Peter Wellmann et al.
Author(s) -
Wellmann Peter,
Neubauer Georg,
Fahlbusch Lars,
Salamon Michael,
Uhlmann Norman
Publication year - 2015
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201570001
Subject(s) - crystallization , materials science , doping , in situ , crystal growth , crystal (programming language) , x ray , crystallography , nanotechnology , optoelectronics , chemical engineering , optics , chemistry , computer science , physics , programming language , organic chemistry , engineering
In‐situ 3D computed tomography (CT) view into the hot growth cell during bulk crystallization of SiC at 2200°C. Colors indicate the evolution of SiC powder consumption (bottom) and SiC crystal growth (top).