Premium Growth of SiC bulk crystals for application in power electronic devices – process design, 2D and 3D X‐ray in situ visualization and advanced doping page 2–9 by Peter Wellmann et al.Premium
Author(s)
Wellmann Peter,
Neubauer Georg,
Fahlbusch Lars,
Salamon Michael,
Uhlmann Norman
Publication year2015
Publication title
crystal research and technology
Resource typeJournals
PublisherWiley-Blackwell
In‐situ 3D computed tomography (CT) view into the hot growth cell during bulk crystallization of SiC at 2200°C. Colors indicate the evolution of SiC powder consumption (bottom) and SiC crystal growth (top).
Subject(s)chemical engineering , chemistry , computer science , crystal (programming language) , crystal growth , crystallization , crystallography , doping , engineering , in situ , materials science , nanotechnology , optics , optoelectronics , organic chemistry , physics , programming language , x ray
Language(s)English
SCImago Journal Rank0.377
H-Index64
eISSN1521-4079
pISSN0232-1300
DOI10.1002/crat.201570001
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