Premium
Strain inhomogeneities in epitaxial BaFe 2 As 2 thin films
Author(s) -
Chekhonin Paul,
Engelmann Jan,
Langer Marco,
Oertel CarlGeorg,
Holzapfel Bernhard,
Skrotzki Werner
Publication year - 2015
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201500113
Subject(s) - materials science , epitaxy , thin film , pulsed laser deposition , scanning electron microscope , layer (electronics) , buffer (optical fiber) , diffraction , crystallography , strain (injury) , spinel , electron backscatter diffraction , electron diffraction , lattice constant , optoelectronics , optics , microstructure , composite material , chemistry , nanotechnology , metallurgy , medicine , telecommunications , physics , computer science
Epitaxial BaFe 2 As 2 thin films grown by pulsed laser deposition on spinel substrates with a thin iron buffer layer show strain‐induced superconductivity. Using high resolution electron backscatter diffraction in a scanning electron microscope very small orientation changes (≤ 0.2°) of the lattice and strain inhomogeneities on a length scale of few 100 nm or less were measured. Furthermore, partially strain relaxed areas were revealed. It was found, that the quality of the BaFe 2 As 2 thin films crucially depends on the iron buffer layer.