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Investigation of D TS effect on r.f. magnetron sputtered ZnO thin films
Author(s) -
Duygulu Nilufer Evcimen,
Kodolbas Alp Osman
Publication year - 2016
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201500047
Subject(s) - scanning electron microscope , analytical chemistry (journal) , thin film , materials science , electrical resistivity and conductivity , sputter deposition , cavity magnetron , transmission electron microscopy , substrate (aquarium) , band gap , diffraction , sputtering , optics , chemistry , optoelectronics , nanotechnology , composite material , oceanography , engineering , chromatography , geology , electrical engineering , physics
The aim of this study depends on understanding the effect of target‐to‐substrate distance (D TS ) on ZnO thin films deposited by r.f. magnetron sputtering on to glass substrates at room temperature conditions. The D TS was changed from 35 mm to 65 mm with steps of 5 mm at 165 W and 0.2 Pa. The deposition rate of the films were ranged from 76 Ǻ / min to 146 Ǻ / min, while 10 ‐3 Ω.cm was obtained as the resistivity value with the help of four point probe technique. The structural investigations were carried out by using both the x‐ray diffraction (XRD) and high resolution transmission electron microscopy. According to XRD observations, the films were (002) oriented. Surface behaviour of the ZnO films was examined with atomic force microscopy and scanning electron microscopy. The root mean square (RMS) values were varied from 4.6 nm to 22.8 nm. Also, optical properties were obtained from UV–visible spectrophotometer and the transmittances as around 80 %. At 45 mm D TS value, the minimum resistivity measured as 9 × 10 − 4 Ω.cm with 76 Ǻ / min deposition rate. The RMS was obtained as 4.9 nm and transmission was measured as 85.30 %, while band gap was 3.45 eV.