Premium
Numerical investigation of carbon and silicon carbide contamination during the melting process of the Czochralski silicon crystal growth
Author(s) -
Liu Xin,
Gao Bing,
Nakano Satoshi,
Kakimoto Koichi
Publication year - 2015
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201500014
Subject(s) - silicon , silicon monoxide , materials science , silicon carbide , carbon fibers , wafer , crystalline silicon , contamination , raw material , carbon monoxide , chemical engineering , metallurgy , nanotechnology , composite material , chemistry , organic chemistry , catalysis , ecology , composite number , engineering , biology
Carbon contamination in single crystalline silicon is detrimental to the minority carrier lifetime, one of the critical parameters for electronic wafers. In order to study the generation and accumulation of carbon contamination, transient global modeling of heat and mass transport was performed for the melting process of the Czochralski silicon crystal growth. Carbon contamination, caused by the presence of carbon monoxide in argon gas and silicon carbide in the silicon feedstock, was predicted by the fully coupled chemical model; the model included six reactions taking place in the chamber. A simplified model for silicon carbide generation by the reaction between carbon monoxide and solid silicon was proposed using the closest packing assumption for the blocky silicon feedstock. The accumulation of carbon in the melted silicon feedstock during the melting and stabilization stages was predicted. Owing to this initial carbon content in the melt, controlling carbon contamination before the growth stage becomes crucial for reducing the carbon incorporation in a growing crystal.