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Reduced operating voltage in nanotube‐shaped Ge 2 Sb 2 Te 5 unites by nanosphere lithography
Author(s) -
Zhao Xiaoyu,
Wang Yaxin,
Zhang Yongjun,
Yang Jinghai
Publication year - 2015
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201400301
Subject(s) - materials science , phase change memory , amorphous solid , nanotube , high resolution transmission electron microscopy , sputter deposition , electrode , lithography , phase (matter) , nanosphere lithography , polystyrene , nanotechnology , optoelectronics , deposition (geology) , sputtering , thin film , transmission electron microscopy , crystallography , carbon nanotube , fabrication , composite material , chemistry , alternative medicine , pathology , polymer , layer (electronics) , medicine , organic chemistry , biology , paleontology , sediment
Ge 2 Sb 2 Te 5 Units for Phase Change Memory are fabricated on 2‐dimesional polystyrene (PS) template in a magnetron sputtering system. SEM and TEM observations show the Ge 2 Sb 2 Te 5 nanotubes form on the 200 nm PS beads which are etched for 30 s. And the lengths of the nanotubes are tuned by the film deposition. HRTEM and the electron diffraction measurements confirm the phase transition between the amorphous and the crystallized state. Resistance–voltage measurements show the operating voltage of the Ge 2 Sb 2 Te 5 nanotube‐shaped unit is reduced due to the small contact area with the bottom electrode, which indicates its potential applications for phase change memory.