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Selective etching of ZnTe in HF:H 2 O 2 :H 2 O solution: Interpretation of extended defect‐related etch figures
Author(s) -
Yang Rui,
Jie Wanqi
Publication year - 2015
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201400265
Subject(s) - hillock , dislocation , materials science , grain boundary , crystallography , etching (microfabrication) , texture (cosmology) , volume (thermodynamics) , sphalerite , etch pit density , microstructure , condensed matter physics , mineralogy , chemistry , metallurgy , composite material , thermodynamics , physics , image (mathematics) , layer (electronics) , artificial intelligence , computer science , pyrite
HF:H 2 O 2 :H 2 O solution (40%wt.HF: 30wt.%H 2 O 2 : H 2 O, 3:2:1 by volume) was used to reveal extended defects (line, face and volume defects) in bulk ZnTe crystals grown from Te solution. The etch patterns were analyzed based on their size, shape and distribution. The etch figures, both in the shape of pits and hillocks with high resolution, show forms controlled by the symmetries of the respective faces were produced. Two different sizes of pits were observed, the larger‐size pits correspond to dislocations penetrating the surface, however, the smaller‐size texture pits are produced on the defect‐free region, which serve as standard pits on respect faces. The face defects, such as grain boundaries, sub‐grain boundaries, dislocation walls, twins and stacking faults, can be all displayed clearly. Another essential feature of the etchant is that, it can effectively dissolve Te‐rich phase (Te inclusion/precipitates), which makes it promising to reveal the shape of this volume defect.