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Nonstoichiometry of A II B VI semiconductors
Author(s) -
Avetissov Igor,
Mozhevitina Elena,
Khomyakov Andrew,
Avetisov Roman
Publication year - 2015
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201400215
Subject(s) - wurtzite crystal structure , homogeneity (statistics) , stoichiometry , chalcogen , chemical stability , solid solution , cadmium telluride photovoltaics , chemistry , semiconductor , transition metal , crystallography , materials science , analytical chemistry (journal) , nanotechnology , metallurgy , biochemistry , statistics , mathematics , optoelectronics , organic chemistry , chromatography , hexagonal crystal system , catalysis
Homogeneity regions of ZnTe, CdTe, CdSe, and CdS were determined by the direct physic‐chemical “extraction” technique combined with the high temperature equilibrium freezing technique. The general scheme of homogeneity range for all studied compounds has been constructed according to which “wurtzite‐zincblende” transition occurred by peritectic reactions from both Metal and Chalcogen rich sides. The analysis of nonstoichiometry as a solid solution of an over‐stoichiometric component in the above compounds has been fulfilled. The thermodynamic parameters of stability of “wurtzite‐zincblende” transition were estimated.