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CIS and CIGS nanomaterials prepared by solvothermal method and their spectral properties
Author(s) -
Huang Fei,
Yan AiHua,
Zhao Hui,
Li Zhen,
Cai XiaoPing,
Wang YueHua,
Wu YuChang,
Yin ShiBin,
Qiang YingHuai
Publication year - 2014
Publication title -
crystal research and technology
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0232-1300
DOI - 10.1002/crat.201400214
Subject(s) - nanomaterials , copper indium gallium selenide solar cells , raman spectroscopy , band gap , materials science , pulmonary surfactant , chemical engineering , gallium , dispersion (optics) , absorption edge , nanotechnology , optoelectronics , thin film , optics , metallurgy , physics , engineering
Uniform CIS and CIGS nanomaterials were successfully synthesized by a simple amino‐based assisted solvothermal technique using PVP‐30 as the surfactant. The influence of surfactant, temperature and Ga amount on the structure, morphology, phase and spectral property was analyzed in detail. The results show that CIS and CIGS nanomaterials with 40∼70 nm in diameter can be gained at 200 °C for 24 h. PVP‐30 surfactant can greatly improve the dispersion characteristics of particles. XRD pattern shows that the “three peaks” obviously shift to bigger 2θ after gallium implantation because of lattice contraction. EDAX and Raman show that the final product is close to CuIn 0.7 Ga 0.3 Se 2 . The possible reaction mechanism has also been explained in detail. UV‐vis‐NIR spectra show that the absorption peak and absorption edge of CIGS with 1.278 eV bandgap obviously shift to a lower energy compared to CIS with 1.051 eV bandgap, which shows the potential application in enhanced conversion efficiency.